K4J55323QF-GC Datasheet, PDF (2/49 Pages) Samsung semiconductor – 256Mbit GDDR3 SDRAM

K4J55323QF-GC
256M GDDR3 SDRAM
Revision History
Revision 1.8 (April 9, 2005)
- Modified note description for the Write Latency on page 47.
Revision 1.7 (Jan. 18 , 2005)
- Added Lead Free package part number in the data sheet.
Revision 1.6 (Dec 2 , 2004)
- Changed ICC2P and ICC6 for all frequency. Separted ICC6 for -GC and -GL.
Revision 1.5 (Oct 5 , 2004)
- Added K4J55323QF-G(V)C15
- Timing diagram corrected on page 28
Revision 1.4 (July 9 , 2004)
- Added K4J55323QF-G(V)L20 which is VDD&VDDQ=1.8V(typical)
Revision 1.3 (June 14 , 2004)
- Changed DC spec value for all the frequency. Refer to the DC characteristics of page 45.
- Removed -GC12 from the spec.
Revision 1.2 (February 18 , 2004)
- Changed VDD/VDDQ from 1.9V+ 0.1V to 2.0V+ 0.1V in all frequencies.
- DC changes : Refer to the DC characteristics of page 45.
Revision 1.1 (January 29 , 2004)
- Typo corrected
Revision 1.0 (January 15 , 2004)
- Changed VDD/VDDQ of K4J55323QF-GC12 from 2.1V+ 0.1V to 1.9V+ 0.1V
- Changed VDD/VDDQ of K4J55323QF-GC14/16/20 from 1.8V+ 0.1V to 1.9V+ 0.1V
- Changed tCK(max) from 3.0ns to 3.3ns
- DC spec finalized. Typo corrected
-2-
Rev 1.8 (Apr. 2005)