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RL78G12_15 Datasheet, PDF (97/110 Pages) Renesas Technology Corp – RENESAS MCU
RL78/G12
3. ELECTRICAL SPECIFICATIONS (G: TA = −40 to +105°C)
(3) When reference voltage (+) = VDD (ADREFP1 = 0, ADREFP0 = 0), reference voltage (−) = VSS (ADREFM = 0),
target pin: ANI0 to ANI3, ANI16 to ANI22, internal reference voltage, and temperature sensor output voltage
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V, Reference voltage (+) = VDD, Reference voltage (−) = VSS)
Parameter
Symbol
Conditions
MIN.
TYP. MAX.
Resolution
RES
8
10
Overall errorNote 1
AINL 10-bit resolution
1.2
±7.0
Conversion time
tCONV
10-bit resolution
3.6 V ≤ VDD ≤ 5.5 V 2.125
39
Target pin: ANI0 to ANI3,
2.7 V ≤ VDD ≤ 5.5 V 3.1875
39
ANI16 to ANI22
2.4 V ≤ VDD ≤ 5.5 V
17
39
Conversion time
tCONV
10-bit resolution
3.6 V ≤ VDD ≤ 5.5 V 2.375
39
Target pin: internal reference 2.7 V ≤ VDD ≤ 5.5 V 3.5625
39
voltage, and temperature
sensor output voltage (HS 2.4 V ≤ VDD ≤ 5.5 V
17
39
(high-speed main) mode)
Zero-scale errorNotes 1, 2
EZS
10-bit resolution
±0.60
Full-scale errorNotes 1, 2
EFS
10-bit resolution
±0.60
Integral linearity errorNote 1
ILE
10-bit resolution
±4.0
Differential linearity error Note 1 DLE
10-bit resolution
±2.0
Analog input voltage
VAIN
ANI0 to ANI3, ANI16 to ANI22
0
VDD
Internal reference voltage
(HS (high-speed main) mode)
VBGR Note 3
Temperature sensor output voltage
(HS (high-speed main) mode)
VTMPS25 Note 3
Notes 1. Excludes quantization error (±1/2 LSB).
2. This value is indicated as a ratio (%FSR) to the full-scale value.
3. Refer to 3.6.2 Temperature sensor/internal reference voltage characteristics.
Unit
bit
LSB
μs
μs
μs
μs
μs
μs
%FSR
%FSR
LSB
LSB
V
V
V
R01DS0193EJ0200 Rev.2.00
Sep 06, 2013
Page 97 of 106