RL78G12_15 Datasheet, PDF (61/110 Pages) Renesas Technology Corp – RENESAS MCU

RL78/G12
2. ELECTRICAL SPECIFICATIONS (A, D: TA = −40 to +85°C)
2.9 Dedicated Flash Memory Programmer Communication (UART)
(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
Transfer rate
During serial programming
MIN.
TYP.
MAX.
Unit
115,200
1,000,000 bps
2.10 Timing of Entry to Flash Memory Programming Modes
(TA = −40 to +85°C, 1.8 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
<R>
Parameter
Symbol
Conditions
Time to complete the communication for the initial tSUINIT
setting after the external reset is released
POR and LVD reset are
released before external
reset release
Time to release the external reset after the TOOL0 tSU
pin is set to the low level
POR and LVD reset are
released before external
reset release
Time to hold the TOOL0 pin at the low level after tHD
the external reset is released
(excluding the processing time of the firmware to
control the flash memory)
POR and LVD reset are
released before external
reset release
<1> <2>
<3>
MIN. TYP. MAX. Unit
100
ms
10
μs
1
ms
<4>
<R>
RESET
TOOL0
tHD + software
processing
time
1-byte data for
setting mode
tSU
tSUINIT
<1> The low level is input to the TOOL0 pin.
<2> The external reset is released (POR and LVD reset must be released before the external
reset is released.).
<3> The TOOL0 pin is set to the high level.
<R>
<4> Setting of the flash memory programming mode by UART reception and complete the baud
rate setting.
Remark tSUINIT: Communication for the initial setting must be completed within 100 ms after the external reset is released
during this period.
tSU: Time to release the external reset after the TOOL0 pin is set to the low level
<R>
tHD: Time to hold the TOOL0 pin at the low level after the external reset is released (excluding the processing
time of the firmware to control the flash memory)
R01DS0193EJ0200 Rev.2.00
Sep 06, 2013
Page 61 of 106