RL78G12_15 Datasheet, PDF (102/110 Pages) Renesas Technology Corp – RENESAS MCU

RL78/G12
3. ELECTRICAL SPECIFICATIONS (G: TA = −40 to +105°C)
3.7 Data Memory STOP Mode Low Supply Voltage Data Retention Characteristics
(TA = −40 to +105°C, VSS = 0 V)
Parameter
Symbol
Data retention supply voltage
VDDDR
Conditions
MIN.
TYP. MAX.
Unit
1.44 ^Note
5.5
V
Note The value depends on the POR detection voltage. When the voltage drops, the data is retained before a POR
reset is affected, but data is not retained when a POR reset is affected.
STOP mode
Data retention mode
Operation mode
VDD
STOP instruction execution
Standby release signal
(interrupt request)
VDDDR
3.8 Flash Memory Programming Characteristics
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
System clock frequency
fCLK
Code flash memory rewritable times Cerwr
Notes 1, 2, 3
Retained for 20 years TA = 85°C
Data flash memory rewritable times
Notes 1, 2, 3
Retained for 1 year
Retained for 5 years
Retained for 20 years
TA = 25°C
TA = 85°C
TA = 85°C
MIN.
1
1,000
TYP.
MAX. Unit
24 MHz
Times
1,000,000
100,000
10,000
Notes 1.
2.
3.
1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the
rewrite.
When using flash memory programmer and Renesas Electronics self programming library
These are the characteristics of the flash memory and the results obtained from reliability testing by
Renesas Electronics Corporation.
R01DS0193EJ0200 Rev.2.00
Sep 06, 2013
Page 102 of 106