RL78G12_15 Datasheet, PDF (103/110 Pages) Renesas Technology Corp – RENESAS MCU

RL78/G12
3. ELECTRICAL SPECIFICATIONS (G: TA = −40 to +105°C)
3.9 Dedicated Flash Memory Programmer Communication (UART)
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
Transfer rate
During serial programming
MIN.
115,200
TYP.
MAX.
Unit
1,000,000
bps
3.10 Timing of Entry to Flash Memory Programming Modes
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
MIN. TYP. MAX. Unit
Time to complete the communication for the initial
setting after the external reset is released
tSUINIT
POR and LVD reset are released
before external release
100
ms
Time to release the external reset after the TOOL0 tSU
POR and LVD reset are released 10
μs
pin is set to the low level
before external release
Time to hold the TOOL0 pin at the low level after the tHD
POR and LVD reset are released 1
ms
external reset is released
before external release
(excluding the processing time of the firmware to
control the flash memory)
<1> <2>
<3>
<4>
RESET
TOOL0
tHD + software
processing
time
1-byte data for
setting mode
tSU
tSUINIT
<1> The low level is input to the TOOL0 pin.
<2> The external reset is released (POR and LVD reset must be released before the external
reset is released.).
<3> The TOOL0 pin is set to the high level.
<4> Setting of the flash memory programming mode by UART reception and complete the baud
rate setting.
Remark tSUINIT: Communication for the initial setting must be completed within 100 ms after the external reset is released
during this period.
tSU: Time to release the external reset after the TOOL0 pin is set to the low level
tHD: Time to hold the TOOL0 pin at the low level after the external reset is released (excluding the processing
time of the firmware to control the flash memory)
R01DS0193EJ0200 Rev.2.00
Sep 06, 2013
Page 103 of 106