HYB18M512160BFX Datasheet, PDF (50/52 Pages) Qimonda AG – DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM

HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Electrical Characteristics
4) Definitions for IDD:
LOW is defined as V_IN ≤ 0.1 * V_DDQ ;
HIGH is defined as V_IN ≥ 0.9 * V_DDQ ;
STABLE is defined as inputs stable at a HIGH or LOW level;
SWITCHING is defined as:
- address and command: inputs changing between HIGH and LOW once per two clock cycles;
- data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE
5) All parameters are measured with no output loads.
6) I_DD8 current is typical.
Data Sheet
50
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3