HYB18M512160BFX Datasheet, PDF (44/52 Pages) Qimonda AG – DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM

HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Electrical Characteristics
3
Electrical Characteristics
3.1
Operating Conditions
Table 20 Absolute Maximum Ratings
Parameter
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Operation Case Temperature
Commercial
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V_DD
V_DDQ
V_IN
V_OUT
T_C
T_STG
P_D
I_OUT
Min.
-0.3
-0.3
-0.3
-0.3
0
-55
–
–
Values
Max.
2.7
2.7
V_DDQ + 0.3
V_DDQ + 0.3
+70
+150
0.7
50
Unit
V
V
V
V
°C
°C
W
mA
Attention: Stresses above those listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
Table 21 Pin Capacitances¹⁾²⁾³⁾
Parameter
Symbol
Values
Unit
Min.
Max.
Input capacitance: CK, CK
C_I1
1.5
2.5
pF
Delta input capacitance: CK, CK
CD_I1
–
0.25
pF
Input capacitance: all other input-only pins
C_I2
1.5
2.5
pF
Delta input capacitance: all other input-only pins
CD_I2
–
0.5
pF
Input/output capacitance: DQ, DQS, DM
C_IO
3.5
4.5
pF
Delta input/output capacitance: DQ, DQS, DM
CD_IO
–
0.5
pF
1) These values are not subject to production test but verified by device characterization.
2) Input capacitance is measured according to JEP147 procedure for measuring capacitance using a vector network analyzer.
VDD, VDDQ are applied and all other pins (except the pin under test) are floating. DQ’s should be in high impedance state.
This may be achieved by pulling CKE to low level.
3) Although DM is an input-only pin, it’s input capacitance models the input capacitance of the DQ and DQS pins.
Data Sheet
44
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3