HYB18M512160BFX Datasheet, PDF (38/52 Pages) Qimonda AG – DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM

HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
2.4.10 POWER-DOWN
CK
CK
CKE
CS
RAS
CAS
WE
A0-A12
BA0,BA1
= Don't Care
Figure 36 Power-Down Entry Command
Power-down is entered when CKE is registered LOW
(no accesses can be in progress). If power-down
occurs when all banks are idle, this mode is referred to
as precharge power-down; if power-down occurs when
there is a row active in any bank, this mode is referred
to as active power-down. Entering power-down
deactivates the input and output buffers, excluding CK,
CK and CKE. In power-down mode, CKE LOW must be
maintained, and all other input signals are “Don’t Care”.
The minimum power-down duration is specified by t_CKE.
However, power-down duration is limited by the refresh
requirements of the device.
The power-down state is synchronously exited when
CKE is registered HIGH (along with a NOP or
DESELECT command). A valid command may be
applied t_XP after exit from power-down.
A minimum CKE high time of t_CKE is required between two consecutive power-down states.
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Figure 37 Power-Down Entry and Exit
Table 15 Timing Parameters for POWER-DOWN
Parameter
Exit power down delay
CKE minimum high or low time
Symbol
t_XP
t_CKE
- 7.5
Min. Max.
t_CK+ t_IS
–
2
–
Unit Notes
ns
t_CK –
Data Sheet
38
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3