HYB18M512160BFX Datasheet, PDF (23/52 Pages) Qimonda AG – DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM

HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
CK
CK
Command
Address
READ
BA,Col n
DQS
NOP
CL=2
NOP
NOP
NOP
NOP
DQ
DO n
DQS
DQ
CL=3
DO n
DO n = Data Out from column n
= Don't Care
BA, Col n = Bank A, Column n
Burst Length = 4; 3 subsequent elements of Data Out appear in the programmed order following DO n
Figure 13 READ Burst
Data from any READ burst may be concatenated with or truncated with data from a subsequent READ command.
In either case, a continuous flow of data can be maintained. The first data element from the new burst follows either
the last element of a completed burst or the last desired data element of a longer burst which is being truncated.
The new READ command should be issued x cycles after the first READ command, where x equals the number
of desired data element pairs (pairs are required by the 2n prefetch architecture). This is shown in Figure 14.
CK
CK
Command
READ
NOP
READ
NOP
NOP
NOP
Address BA,Col n
DQS
CL=2
BA,Col b
DQ
DO n
DO b
DQS
CL=3
DQ
DO n
DO b
DO n (or b) = Data Out from column n (or column b)
= Don't Care
Burst Length = 4, 8 or 16 (if 4, the bursts are concatenated; if 8 or 16, the second burst interrupts the first)
3 subsequent elements of Data Out appear in the programmed order following DO n
3 (or 7 or 15) subsequent elements of Data Out appear in the programmed order following DO b
Read commands shown must be to the same device
Figure 14 Consecutive READ Bursts
Data Sheet
23
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3