HYB18M512160BFX Datasheet, PDF (31/52 Pages) Qimonda AG – DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM

HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
CK
CK
Command
Address
DQS
DQ
DM
DQS
DQ
DM
WRITE
BA,Col b
t_DQSSmin
NOP
Di b
t_DQSSmax
Di b
WRITE
BA,Col n
NOP
Di n
Di n
NOP
DI b (n) = Data In to column b (column n)
3 subsequent elements of Data In are applied in the programmed order following DI b.
3 subsequent elements of Data In are applied in the programmed order following DI n.
Non-interrupted bursts of 4 are shown.
Each WRITE command may be to any active bank
Figure 24 WRITE to WRITE (min. and max. tDQSS)
An example of non-consecutive WRITEs is shown in Figure 25.
NOP
= Don't Care
CK
CK
Command
Address
DQS
DQ
DM
WRITE
NOP
BA,Col b
t_DQSSmax
Di b
NOP
WRITE
BA,Col n
NOP
NOP
Di n
DI b (n) = Data In to column b (or column n).
3 subsequent elements of Data In are applied in the programmed order following DI b.
3 subsequent elements of Data In are applied in the programmed order following DI n.
Non-interrupted bursts of 4 are shown.
Each WRITE command may be to any active bank and may be to the same or different devices.
Figure 25 Non-Consecutive WRITE to WRITE (max. tDQSS)
= Don't Care
Data Sheet
31
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3