HYB18M512160BFX Datasheet, PDF (33/52 Pages) Qimonda AG – DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM

HYB18M512160BFX
512-Mbit DDR Mobile-RAM
Functional Description
Data for any WRITE burst may be truncated by a subsequent READ command, as shown in Figure 28. Note that
only the data-in pairs that are registered prior to the t_WTR period are written to the internal array, and any
subsequent data-in must be masked with DM, as shown in Figure 28.
CK
CK
Command
Address
DQS
DQ
DM
WRITE
NOP
BA,Col b
t_DQSSmax
Di b
NOP
READ
BA,Col n
t_WTR
NOP
NOP
CL=3
DI b = Data In to column b. DO n = Data Out from column n.
An interrupted burst of 4 is shown, 2 data elements are written.
3 subsequent elements of Data In are applied in the programmed order following DI b.
t_WTR is referenced from the positive clock edge after the last Data In pair.
A10 is LOW with the WRITE command (Auto Precharge is disabled)
The READ and WRITE commands are to the same device but not necessarily to the same bank.
Figure 28 Interrupting WRITE to READ (Max. tDQSS)
NOP
DO n
= Don't Care
2.4.7.2 WRITE to PRECHARGE
Data for any WRITE burst may be followed by a subsequent PRECHARGE command. To follow a WRITE without
truncating the WRITE burst, t_WR should be met as shown in Figure 29.
CK
CK
Command
Address
DQS
DQ
DM
WRITE
NOP
BA,Col b
t_DQSSmax
Di b
NOP
NOP
NOP
t_WR
PRE
BA a
(or all)
DI b = Data In to column b .
3 subsequent elements of Data In are applied in the programmed order following DI b.
A non-interrupted burst of 4 is shown.
t_WR is referenced from the positive clock edge after the last Data In pair.
A10 is LOW with the WRITE command (Auto Precharge is disabled)
= Don't Care
Figure 29 Non-Interrupting WRITE to PRECHARGE (Max. tDQSS)
Data for any WRITE burst may be truncated by a subsequent PRECHARGE command, as shown in Figure 30.
Note that only the data-in pairs that are registered prior to the t_WR period are written to the internal array, and any
Data Sheet
33
Rev. 1.10, 2006-11
04052006-4SYQ-ZRN3