HYB18T512400BF Datasheet, PDF (25/57 Pages) Qimonda AG – 512-Mbit Double-Data-Rate-Two SDRAM

HYB18T512xxxBF–[2.5…5]
512-Mbit Double-Data-Rate-Two SDRAM
5
Electrical Characteristics
5.1
Absolute Maximum Ratings
Table 19 Absolute Maximum Ratings
Symbol Parameter
Rating
V_DD
Voltage on V_DD pin relative to V_SS
–1.0 to +2.3
V_DDQ
Voltage on V_DDQ pin relative to V_SS
–0.5 to +2.3
V_DDL
Voltage on VDDL pin relative to V_SS
–0.5 to +2.3
V_IN, V_OUT Voltage on any pin relative to V_SS
–0.5 to +2.3
T_STG
Storage Temperature
–55 to +100
1) When V_DD and V_DDQ and V_DDL are less than 500mV; Vref may be equal to or less than 300mV.
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
Unit
V
V
V
V
°C
Note
1)
—
—
—
2)
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values maycause
irreversible damage to the integrated circuit.
Table 20 DRAM Component Operating Temperature Range
Symbol Parameter
Rating
Unit Note
T_OPER
Operating Temperature
0 to 95
°C
1)2)3)4)
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation,
the DRAM case temperature must be maintained between 0 - 95 °C under all other specification parameters.
3) Above 85 °C case temperature the Auto-Refresh command interval has to be reduced to t_REFI = 3.9 µs.
4) When operating this product in the 85 °C to 95 °C T_CASE temperature range, the High Temperature Self Refresh has to be
enabled by setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of I_DD6
by approximately 50%
Internet Data Sheet
25
Rev. 1.05, 2007-01
03292006-YBYM-WG0Z