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N25Q128A13ESE40G Datasheet, PDF (81/81 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A
Rev. D – 10/2010
Rev. C – 2/2010
Rev. B – 05/2009
Rev. A – 01/2009
128Mb, 3V, Multiple I/O Serial Flash Memory
Revision History
• Added the following packages: F6 = VDFPN8 6 x 5 mm (MLP 6 x 5) (RoHS compliant);
SE = SO8W (SO8 208 mils body width) (RoHS compliant)
• Changed the Typical specification for Erase to Suspend and Subsector
• Erase to Suspend in Operations Allowed / Disallowed During Device States
• Added tBE with VPP = VPPH and tSE with sector erase VPP = VPPH, TYP = 0.6s, MAX = 3s
to AC Characteristics
• Made miscellaneous text edits
• Corrected typographical error “iA” to “uA” for VOH in DC Characteristics
• Made the following specification changes in AC Characteristics: tW: changed MAX
from 15s to 8ms; tWNVCR: changed TYP from 1 to 0.2 and MAX from 15 to 3; tPP:
changed TYP from int(n/8) x 0.025 to int(n/8) x 0.015; tSSE: changed TYP from 150ms
to 0.2s and MAX from 500ms to 2s; tSE: changed TYP from 1s to 0.7s; tBE: changed
TYP from 256s to 170s and MAX from 770s to 250s
• Added the TBGA ballout and package information
• Updated PROGRAM/ERASE/SUSPEND operations; Device Protection; Read and Write
Volatile Configuration Register; Fast POR; Power-Up Timing graphics; Order Informa-
tion
• Initial release
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This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization some-
times occur.
PDF: 09005aef845665fe
n25q_128mb_3v_65nm.pdf - Rev. P 06/13 EN
81
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