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N25Q128A13ESE40G Datasheet, PDF (62/81 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A
AC Reset Specifications
128Mb, 3V, Multiple I/O Serial Flash Memory
AC Reset Specifications
Table 31: AC RESET Conditions
Note 1 applies to entire table
Parameter Symbol
Conditions
Reset pulse
width
tRLRH2
Reset recovery tRHSL Device deselected (S# HIGH) and is in XIP mode
time
Device deselected (S# HIGH) and is in standby mode
Commands are being decoded, any READ operations are
in progress or any WRITE operation to volatile registers
are in progress
Any device array PROGRAM/ERASE/SUSPEND/RESUME,
PROGRAM OTP, NONVOLATILE SECTOR LOCK, and ERASE
NONVOLATILE SECTOR LOCK ARRAY operations are in
progress
While a WRITE STATUS REGISTER operation is in progress
While a WRITE NONVOLATILE CONFIGURATION REGIS-
TER operation is in progress
On completion or suspension of a SUBSECTOR ERASE op-
eration
Software reset
recovery time
tSHSL3
Device deselected (S# HIGH) and is in standby mode
On completion of any device array PROGRAM/ERASE/
SUSPEND/RESUME, SECTOR ERASE, PROGRAM OTP, PAGE
PROGRAM, DUAL INPUT FAST PROGRAM, EXTENDED
DUAL INPUT FAST PROGRAM, QUAD INPUT FAST PRO-
GRAM, or EXTENDED QUAD INPUT FAST PROGRAM op-
eration
On completion or suspension of a WRITE STATUS REGIS-
TER operation
On completion or suspension of a WRITE NONVOLATILE
CONFIGURATION REGISTER operation
On completion or suspension of a SUBSECTOR ERASE op-
eration
S# deselect to
reset valid
tSHRV Deselect to reset valid in quad output or in QIO-SPI
Min
50
–
–
–
–
–
–
–
–
–
–
–
–
2
Typ
–
–
–
–
–
tW
tWNVCR
tSSE
–
–
tW
tWNVCR
tSSE
–
Notes: 1. Values are guaranteed by characterization; not 100% tested.
2. The device reset is possible but not guaranteed if tRLRH < 50ns.
Max
–
40
40
40
30
–
–
–
90
30
–
–
–
–
Unit
ns
ns
ns
ns
µs
ms
ms
s
ns
µs
ms
ms
s
ns
PDF: 09005aef845665fe
n25q_128mb_3v_65nm.pdf - Rev. P 06/13 EN
62
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