N25Q128A13ESE40G Datasheet, PDF (78/81 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A

128Mb, 3V, Multiple I/O Serial Flash Memory
Part Number Ordering Information
Part Number Ordering Information
Micron Serial NOR Flash devices are available in different configurations and densities.
Verify valid part numbers by using Micron’s part catalog search at micron.com. To com-
pare features and specifications by device type, visit micron.com/products. Contact the
factory for devices not found.
For more information on how to identify products and top-side marking by the process
identification letter, refer to technical note TN-12-24, "Serial Flash Memory Device
Marking for the M25P, M25PE, M25PX, and N25Q Product Families."
Table 39: Part Number Information
Part Number
Category
Device type
Density
Technology
Feature set
Operating voltage
Block structure
Package
(RoHS-compliant)
Temperature and
test flow
Security features
Shipping material
Category Details
N25Q = Serial NOR Flash memory, Multiple Input/Output (Single, Dual, Quad I/O), XIP
128 = 128Mb
A = 65nm
1 = Byte addressability; HOLD pin; Micron XIP
2 = Byte addressability; HOLD pin; Basic XIP
3 = Byte addressability; RST# pin; Micron XIP
4 = Byte addressability; RST# pin; Basic XIP
3 = V_CC = 2.7 to 3.6V
E = Uniform (64KB and 4KB)
F7 = V-PDFN-8 6mm x 5mm Sawn (MLP8 6mm x 5mm)
F8 = V-PDFN-8 8mm x 6mm (MLP8 8mm x 6mm)
12 = T-PBGA-24b05 6mm x 8mm
14 = T-PBGA-24b05 6mm x 8mm, 4x6 ball array
SF = SOP2-16 300 mils body width (SO16W)
SE = SOP2-8 208 mils body width (SO8W)
4 = IT: –40°C to +85°C; Device tested with standard test flow
A = Automotive temperature range: –40 to +125°C; Device tested with high reliability cer-
tified test flow
H = IT: –40°C to +85°C; Device tested with high reliability certified test flow
0 = Default
E = Tray
F = Tape and reel
G = Tube
Note: 1. Additional secure options are available upon customer request.
Notes
1
PDF: 09005aef845665fe
n25q_128mb_3v_65nm.pdf - Rev. P 06/13 EN
78
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