N25Q128A13ESE40G Datasheet, PDF (12/81 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A

128Mb, 3V, Multiple I/O Serial Flash Memory
Memory Organization
Memory Organization
Memory Configuration and Block Diagram
Each page of memory can be individually programmed. Bits are programmed from one
through zero. The device is subsector, sector, or bulk-erasable, but not page-erasable.
Bits are erased from zero through one. The memory is configured as 16,777,216 bytes (8
bits each); 256 sectors (64KB each); 4096 subsectors (4KB each); and 65,536 pages (256
bytes each); and 64 OTP bytes are located outside the main memory array.
Figure 6: Block Diagram
HOLD#
W#/V_PP
S#
C
DQ0
DQ1
DQ2
DQ3
Control logic
Address register
and counter
High voltage
generator
64 OTP bytes
I/O shift register
256 byte
data buffer
Status
register
00FFFFFF
PDF: 09005aef845665fe
n25q_128mb_3v_65nm.pdf - Rev. P 06/13 EN
0000000h
00000FFh
256 bytes (page size)
X decoder
12
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