N25Q128A13ESE40G Datasheet, PDF (69/81 Pages) Micron Technology – Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A

128Mb, 3V, Multiple I/O Serial Flash Memory
DC Characteristics and Operating Conditions
DC Characteristics and Operating Conditions
Table 36: DC Current Characteristics and Operating Conditions
Parameter
Input leakage current
Output leakage current
Standby current
Operating current
(fast-read extended I/O)
Operating current (fast-read dual I/O)
Operating current (fast-read quad I/O)
Operating current (program)
Operating current (write status regis-
ter)
Operating current (erase)
Symbol
I_LI
I_LO
I_CC1
I_CC3
I_CC4
I_CC5
I_CC6
Test Conditions
S = V_CC, V_IN = V_SS or V_CC
C = 0.1V_CC/0.9V_CC at 108 MHz, DQ1
= open
C = 0.1V_CC/0.9V_CC at 54 MHz, DQ1
= open
C = 0.1V_CC/0.9V_CC at 108 MHz
C = 0.1V_CC/0.9V_CC at 108 MHz
S# = V_CC
S# = V_CC
S# = V_CC
Min
–
–
–
–
–
–
–
–
–
–
Max
±2
±2
100
15
6
18
20
20
20
20
Unit
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
Table 37: DC Voltage Characteristics and Operating Conditions
Parameter
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Symbol
V_IL
V_IH
V_OL
V_OH
Conditions
I_OL = 1.6mA
I_OH = –100µA
Min
–0.5
0.7V_CC
–
V_CC - 0.2
Max
0.3V_CC
V_CC + 0.4
0.4
–
Unit
V
V
V
V
PDF: 09005aef845665fe
n25q_128mb_3v_65nm.pdf - Rev. P 06/13 EN
69
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