MT40A256M16GE-075E Datasheet, PDF(364/365 Page) Micron Technology – Temperature controlled refresh (TCR)

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MT40A256M16GE-075E Datasheet, PDF (364/365 Pages) Micron Technology – Temperature controlled refresh (TCR)

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Options Tables

Table 159: Options - Speed Based

Function

Write leveling

Temperature controlled refresh

Low-power auto self refresh

Fine granularity refresh

Multipurpose register

Data mask

Data bus inversion

TDQS

ZQ calibration

VREFDQ calibration

Per-DRAM addressability

Mode register readout

Command/Address latency

Write CRC

CA parity

Gear-down mode

Programmable preamble

Maximum power saving mode

Additive latency

Connectivity test mode

Hard post package repair mode

Soft post package repair mode

Acronym

WL

TCR

LPASR

FGR

MR

DM

DBI

â

ZQ CAL

â

Per DRAM

â

CAL

CRC

-

-

â

MPSM

AL

CT

hPPR

sPPR

1600

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

No

No

Yes

Yes

Yes

Yes

Yes

1866

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

No

No

Yes

Yes

Yes

Yes

Yes

4Gb: x4, x8, x16 DDR4 SDRAM

Options Tables

2133

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

No

No

Yes

Yes

Yes

Yes

Yes

Data Rate

2400

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

No

Yes

Yes

Yes

Yes

Yes

Yes

2666

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

2933

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

3200

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

Yes

09005aef84af6dd0

4gb_ddr4_dram.pdf - Rev. G 1/17 EN

364

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Â 2014 Micron Technology, Inc. All rights reserved.

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