MT40A256M16GE-075E Datasheet, PDF (275/365 Pages) Micron Technology – Temperature controlled refresh (TCR)

4Gb: x4, x8, x16 DDR4 SDRAM
Electrical Characteristics – AC and DC Single-Ended Input
Measurement Levels
Table 95: CT Type-B Input Levels
Parameter
CTipB AC input high voltage
CTipB DC input high voltage
CTipB DC input low voltage
CTipB AC input low voltage
CTipB falling time
CTipB rising time
Symbol
V_IH(AC)
V_IH(DC)
V_IL(DC)
V_IL(AC)
t_{F_CTipB}
t_{R_CTipB}
Min
V_REF + 300
V_REF + 200
V_SS
V_SS11
–
–
Max
V_DD11
V_DD
V_REF - 200
V_REF - 300
5
5
Unit
V
V
V
V
ns
ns
Notes:
1. Refer to Overshoot and Undershoot Specifications.
2. CT Type-B inputs: DML_n/DBIL_n, DMU_n/DBIU_n and DM_n/DBI_n.
3. V_REFDQ should be 0.5 × V_DD
Figure 214: CT Type-B Input Slew Rate Definition
Note
2, 3
2, 3
2, 3
2, 3
2
2
V_{IH(AC)_CTipBmin}
V_{IH(DC)_CTipBmin}
V_REFDQ
V_{IL(DC)_CTipBmax}
V_{IL(AC)_CTipBmax}
t_{F_CTipB}
t_{R_CTipB}
Table 96: CT Type-C Input Levels (CMOS)
Parameter
CTipC AC input high voltage
CTipC DC input high voltage
CTipC DC input low voltage
CTipC AC input low voltage
CTipC falling time
CTipC rising time
Symbol
V_{IH(AC)_CTipC}
V_{IH(DC)_CTipC}
V_{IL(DC)_CTipC}
V_{IL(AC)_CTipC}
t_{F_CTipC}
t_{R_CTipC}
Min
0.8 × V_DD
0.7 × V_DD
V_SS
V_SS1
–
–
Max
V_DD1
V_DD
0.3 × V_DD
0.2 × V_DD
10
10
Notes: 1. Refer to Overshoot and Undershoot Specifications.
2. CT Type-C inputs: Alert_n.
Unit
V
V
V
V
ns
ns
Note
2
2
2
2
2
2
09005aef84af6dd0
4gb_ddr4_dram.pdf - Rev. G 1/17 EN
275
Micron Technology, Inc. reserves the right to change products or specifications without notice.
‹ 2014 Micron Technology, Inc. All rights reserved.