MT40A256M16GE-075E Datasheet, PDF (277/365 Pages) Micron Technology – Temperature controlled refresh (TCR)

4Gb: x4, x8, x16 DDR4 SDRAM
Electrical Characteristics – AC and DC Differential Input Meas-
urement Levels
Electrical Characteristics – AC and DC Differential Input Measurement
Levels
Differential Inputs
Figure 217: Differential AC Swing and “Time Exceeding AC-Level” ^tDVAC
t_DVAC
V_{IH,diff(AC)min}
V_IH,diff,min
0.0
V_IL,diff,max
CK_t, CK_c
V_{IL,diff(AC)max}
Half cycle
t_DVAC
Notes: 1. Differential signal rising edge from V_IL,diff,max to V_{IH,diff(AC)min} must be monotonic slope.
2. Differential signal falling edge from _IH,diff,min to V_{IL,diff(AC)max} must be monotonic slope.
Table 98: Differential Input Swing Requirements for CK_t, CK_c
Parameter
Symbol
DDR4-1600 / 1866 /
2133 / 2400
Min
Max
DDR4-2666 / 2933 /
3200
Min
Max
Differential input high
Differential input low
Differential input high (AC)
Differential input low (AC)
V_IHdiff
V_ILdiff
V_IHdiff(AC)
V_ILdiff(AC)
0.150
Note 3
0.120
Note 3
Note 3
–0.150
Note 3
-0.120
2 × (V_IH(AC)
- V_REF)
Note 3
2 × (V_IH(AC)
- V_REF)
Note 3
Note 3
2 × (V_IL(AC) -
V_REF)
Note 3
2 × (V_IL(AC) -
V_REF)
Notes: 1. Used to define a differential signal slew-rate.
2. For CK_t, CK_c use V_IH(AC) and V_IL(AC) of ADD/CMD and V_REFCA.
Unit
V
V
V
V
Notes
1
1
2
2
09005aef84af6dd0
4gb_ddr4_dram.pdf - Rev. G 1/17 EN
277
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