MT40A256M16GE-075E Datasheet, PDF (320/365 Pages) Micron Technology – Temperature controlled refresh (TCR)

4Gb: x4, x8, x16 DDR4 SDRAM
Current Specifications – Patterns and Test Conditions
Table 141: I_DD4R Measurement – Loop Pattern¹
Data³
0
0
1
2, 3
1
4
5
6, 7
2
8–11
3
12–15
4
16–19
5
20–23
6
24–27
7
28–31
8
32–35
9
36–39
10 40–43
11 44–47
12 48–51
13 52–55
14 56–59
15 60–63
RD 0 1 1 0 1 0 0 0 0 0 0 0 0 0 D0 = 00, D1 =
D 10000000000000
FF,
D_n, 1 1 1 1 1 0 3 3 0 0 0 7 F 0 ^{D2 = FF, D3 =}
D_n
00,
D4 = FF, D5 =
00,
D5 = 00, D7 =
FF
RD 0 1 1 0 1 0 1 1 0 0 0 7 F 0 D0 = FF, D1 = 00
D
1 0 0 0 0 0 0 0 0 0 0 0 0 0 ^{D2 = 00, D3 =}
D_n, 1 1 1 1 1 0 3 3 0 0 0 7 F 0
FF
D4 = 00, D5 =
D_n
FF
D5 = FF, D7 = 00
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 2 instead
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 3 instead
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 1 instead
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 2 instead
Repeat sub-loop 0, use BG[1:0] = 0, use BA[1:0] = 3 instead
Repeat sub-loop 1, use BG[1:0] = 1, use BA[1:0] = 0 instead
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 0 instead⁴
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 1 instead⁴
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 2 instead⁴
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 3 instead⁴
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 1 instead⁴
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 2 instead⁴
Repeat sub-loop 0, use BG[1:0] = 2, use BA[1:0] = 3 instead⁴
Repeat sub-loop 1, use BG[1:0] = 3, use BA[1:0] = 0 instead⁴
Notes:
1. DQS_t, DQS_c are V_DDQ when not toggling.
2. BG1 is a "Don't Care" for x16 devices.
3. Burst sequence driven on each DQ signal by a READ command. Outside burst operation,
DQ signals are V_DDQ.
4. For x4 and x8 only.
09005aef84af6dd0
4gb_ddr4_dram.pdf - Rev. G 1/17 EN
320
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