PIC24F16KL402 Datasheet, PDF (53/260 Pages) Microchip Technology – Low-Power, Low-Cost, General Purpose 16-Bit Flash Microcontrollers with nanoWatt XLP Technology

PIC24F16KL402 FAMILY
6.0 DATA EEPROM MEMORY
Note:
This data sheet summarizes the features
of this group of PIC24F devices. It is not
intended to be a comprehensive refer-
ence source. For more information on
Data EEPROM, refer to the “PIC24F
Family Reference Manual”, Section 5.
“Data EEPROM” (DS39720).
The data EEPROM memory is a Nonvolatile Memory
(NVM), separate from the program and volatile data
RAM. Data EEPROM memory is based on the same
Flash technology as program memory, and is optimized
for both long retention and a higher number of
erase/write cycles.
The data EEPROM is mapped to the top of the user pro-
gram memory space, with the top address at program
memory address, 7FFFFFh. For PIC24FXXKL4XX
devices, the size of the data EEPROM is 256 words
(7FFE00h to 7FFFFFh). For PIC24FXXKL3XX devices,
the size of the data EEPROM is 128 words (7FFF00h to
7FFFFFh). The data EEPROM is not implemented in
PIC24F08KL20X or PIC24F04KL10X devices.
The data EEPROM is organized as 16-bit wide
memory. Each word is directly addressable, and is
readable and writable during normal operation over the
entire VDD range.
Unlike the Flash program memory, normal program
execution is not stopped during a data EEPROM
program or erase operation.
The data EEPROM programming operations are
controlled using the three NVM Control registers:
• NVMCON: Nonvolatile Memory Control Register
• NVMKEY: Nonvolatile Memory Key Register
• NVMADR: Nonvolatile Memory Address Register
6.1 NVMCON Register
The NVMCON register (Register 6-1) is also the primary
control register for data EEPROM program/erase
operations. The upper byte contains the control bits
used to start the program or erase cycle, and the flag bit
to indicate if the operation was successfully performed.
The lower byte of NVMCOM configures the type of NVM
operation that will be performed.
6.2 NVMKEY Register
The NVMKEY is a write-only register that is used to
prevent accidental writes or erasures of data EEPROM
locations.
To start any programming or erase sequence, the
following instructions must be executed first, in the
exact order provided:
1. Write 55h to NVMKEY.
2. Write AAh to NVMKEY.
After this sequence, a write will be allowed to the
NVMCON register for one instruction cycle. In most
cases, the user will simply need to set the WR bit in the
NVMCON register to start the program or erase cycle.
Interrupts should be disabled during the unlock
sequence.
The MPLAB^® C30 C compiler provides a defined library
procedure (builtin_write_NVM) to perform the
unlock sequence. Example 6-1 illustrates how the
unlock sequence can be performed with in-line
assembly.
EXAMPLE 6-1: DATA EEPROM UNLOCK SEQUENCE
//Disable Interrupts For 5 instructions
asm volatile("disi #5");
//Issue Unlock Sequence
asm volatile("mov #0x55, W0
\n"
"mov W0, NVMKEY
\n"
"mov #0xAA, W1
\n"
"mov W1, NVMKEY
\n");
// Perform Write/Erase operations
asm volatile ("bset NVMCON, #WR \n"
"nop
\n"
"nop
\n");
 2011 Microchip Technology Inc.
DS31037B-page 53