PIC18F2525_08 Datasheet, PDF (339/412 Pages) Microchip Technology – 28/40/44-Pin Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology

PIC18F2525/2620/4525/4620
TABLE 26-1: MEMORY PROGRAMMING REQUIREMENTS
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
Param
No.
Sym
Characteristic
Data EEPROM Memory
D120 ED Byte Endurance
D121 VDRW VDD for Read/Write
Min Typ†
100K 1M
VMIN
—
D122 TDEW Erase/Write Cycle Time
D123 TRETD Characteristic Retention
—
4
40
—
D124
D125
D130
D131
TREF
IDDP
EP
VPR
Number of Total Erase/Write
Cycles before Refresh⁽¹⁾
Supply Current during
Programming
Program Flash Memory
Cell Endurance
VDD for Read
1M 10M
—
10
10K
VMIN
100K
—
D132 VIE _{VDD for Block Erase}
3.0
—
D132A VIW VDD for Externally Timed Erase 4.5
—
or Write
D132B VPEW VDD for Self-Timed Write
VMIN
—
D133 TIE _{ICSP Block Erase Cycle Time}
—
4
D133A TIW _{ICSP Erase or Write Cycle Time}
1
—
(externally timed)
Max Units
Conditions
— E/W -40°C to +85°C
5.5
V Using EECON to read/write
VMIN = Minimum operating
voltage
—
ms
— Year Provided no other
specifications are violated
— E/W -40°C to +85°C
— mA
— E/W -40°C to +85°C
5.5
V VMIN = Minimum operating
voltage
5.5
V _{Using ICSP™ port, +25°C}
5.5
V Using ICSP™ port, +25°C
5.5
V VMIN = Minimum operating
voltage
—
ms _{VDD ≥ 4.5V}
—
ms VDD ≥ 4.5V, +25°C
D133A TIW Self-Timed Write Cycle Time
—
2
—
ms
D134 TRETD Characteristic Retention
40
100
— Year Provided no other
specifications are violated
D135 IDDP Supply Current during
Programming
—
10
— mA
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Refer to Section 6.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
© 2008 Microchip Technology Inc.
DS39626E-page 337