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IS66WVC2M16ALL Datasheet, PDF (31/67 Pages) Integrated Silicon Solution, Inc – Mixed Mode supports asynchronous write and synchronous read operation
IS66WVC2M16ALL
AC Characteristics
Table15 . Asynchronous READ Cycle Timing Requirements
Symbol
Parameter
tAA
tAADV
tAPA
tAVH
tAVS
tBA
tBHZ
tBLZ
tCEM
tCEW
tCO
tCVS
tHZ
tLZ
tOE
tOH
tOHZ
tOLZ
tPC
tRC
tVP
Address Acess Time
ADV# Access Time
Page Access Time
Address hold from ADV# HIGH
Address setup to ADV# HIGH
UB#, LB# Access Time
UB#, LB# Disable to High-Z Output
UB#, LB# Enable to Low-Z Output
Maximum CE# pulse width
CE# low to WAIT Valid
Chip Select Access Time
CE# low to ADV# HIGH
Chip Disable to DQ and WAIT High-Z Output
Chip enable to Low-Z output
OE# low to Valid Output
Output hold from address change
Output disable to DQ High-Z output
Output enable to Low-Z output
Page READ cycle time
READ cycle time
ADV# Low pulse width
70ns
Min
Max
70
70
20
2
5
70
8
10
4
1
7.5
70
7
8
10
20
5
8
3
20
70
5
Unit Notes
ns
ns
ns
ns
ns
ns
ns
1
ns
2
us
3
ns
ns
ns
ns
1
ns
2
ns
ns
ns
1
ns
2
ns
ns
ns
Notes:
1. Low-Z to High-Z timings are tested with the circuit shown in Figure 17. The High-Z timings
measure a 100mV transition from either VOH or VOL toward VDDQ/2.
2. High-Z to Low-Z timings are tested with the circuit shown in Figure 17. The Low-Z timings
measure a 100mV transition away from the High-Z (VDDQ/2) level toward either VOH or
VOL.
3. Page mode enable only
Rev.A | June 2011
www.issi.com – SRAM@issi.com
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