HYB25D256400B Datasheet, PDF (58/83 Pages) Infineon Technologies AG – 256 Mbit Double Data Rate SDRAM

HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
4.3
Weak Strength Pull-down and Pull-up Characteristics
1. The weak pulldown V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve
2. The weak pullup V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve.
3. The full variation in driver pullup current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
4. The full variation in the ratio of the maximum to minimum pullup and pulldown current does not exceed 1.7, for
device drain to source voltages from 0.1 to 1.0.
5. The full variation in the ratio of the nominal pullup to pulldown current should be unity ± 10%, for device drain
to source voltages from 0.1 to 1.0V.
80
70
60
50
40
30
20
10
0
0,0
0,5
1,0
1,5
Vout [V]
Figure 35 Weak Strength Pull-down Characteristics
Maxim um
Typical high
Typical low
Minim um
2,0
2,5
0,0
0,0
0,5
1,0
1,5
-10,0
-20,0
-30,0
-40,0
-50,0
-60,0
-70,0
-80,0
Vout [V]
Figure 36 Weak Strength Pull-up Characteristics
2,0
2,5
Minimum
Typical low
Typical high
Maximum
Data Sheet
58
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW