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HYB25D256400B Datasheet, PDF (55/83 Pages) Infineon Technologies AG – 256 Mbit Double Data Rate SDRAM
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HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
Table 13 Electrical Characteristics and DC Operating Conditions
Parameter
Symbol
Values
Unit Note/Test Condition 1)
Min.
Typ.
Max.
Device Supply Voltage
Device Supply Voltage
Output Supply Voltage
Output Supply Voltage
Supply Voltage, I/O Supply
Voltage
Input Reference Voltage
I/O Termination Voltage
(System)
VDD
VDD
VDDQ
VDDQ
VSS,
VSSQ
VREF
VTT
Input High (Logic1) Voltage VIH(DC)
Input Low (Logic0) Voltage VIL(DC)
Input Voltage Level,
CK and CK Inputs
VIN(DC)
Input Differential Voltage, VID(DC)
CK and CK Inputs
VI-Matching Pull-up
Current to Pull-down
Current
VIRatio
2.3
2.5
2.7
V
2.5
2.6
2.7
V
2.3
2.5
2.7
V
2.5
2.6
2.7
V
0
0
V
0.49 × VDDQ 0.5 × VDDQ 0.51 × VDDQ V
VREF – 0.04
VREF + 0.04 V
VREF + 0.15
–0.3
–0.3
VDDQ + 0.3 V
VREF – 0.15 V
VDDQ + 0.3 V
0.36
VDDQ + 0.6 V
0.71
1.4
—
fCK ≤ 166 MHz
fCK > 166 MHz 2)
fCK ≤ 166 MHz 3)
fCK > 166 MHz 2)3)
—
4)
5)
8)
8)
8)
8)6)
7)
Input Leakage Current
II
–2
2
µA Any input 0 V ≤ VIN ≤ VDD;
All other pins not under test
= 0 V 8)9)
Output Leakage Current IOZ
–5
Output High Current,
IOH
—
Normal Strength Driver
5
–16.2
µA DQs are disabled;
0 V ≤ VOUT ≤ VDDQ
mA VOUT = 1.95 V
Output Low
IOL
Current, Normal Strength
Driver
16.2
—
mA VOUT = 0.35 V
1) 0 °C ≤ TA ≤ 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V (DDR333); VDDQ = 2.6 V ± 0.1 V, VDD = +2.6 V ± 0.1 V
(DDR400);
2) DDR400 conditions apply for all clock frequencies above 166 MHz
3) Under all conditions, VDDQ must be less than or equal to VDD.
4) Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC). VREF is also expected to track noise variations in VDDQ.
5) VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal
to VREF, and must track variations in the DC level of VREF.
6) VID is the magnitude of the difference between the input level on CK and the input level on CK.
7) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire
temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the
maximum difference between pull-up and pull-down drivers due to process variation.
8) Inputs are not recognized as valid until VREF stabilizes.
9) Values are shown per component
Data Sheet
55
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW
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