HYB25D256400B Datasheet, PDF (56/83 Pages) Infineon Technologies AG – 256 Mbit Double Data Rate SDRAM

HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
4.2
Normal Strength Pull-down and Pull-up Characteristics
1. The nominal pulldown V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve.
2. The full variation in driver pulldown current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
3. The nominal pullup V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve.
4. The full variation in driver pullup current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current does not exceed 1.7, for
device drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the nominal pullup to pulldown current should be unity ± 10%, for device drain
to source voltages from 0.1 to 1.0 V.
140
120
100
80
60
40
20
0
0
0.5
1
1.5
2
V_DDQ - V_OUT (V)
Figure 33 Normal Strength Pull-down Characteristics
0
-20
-40
-60
-80
-100
-120
-140
-160
0
0.5
1
1.5
2
V_{DDQ -} V_out(V)
Figure 34 Normal Strength Pull-up Characteristics
Maximum
Nominal High
Nominal Low
Minimum
2.5
Minimum
Nominal Low
Nominal High
Maximum
2.5
Data Sheet
56
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW