HYB25D256400B Datasheet, PDF (57/83 Pages) Infineon Technologies AG – 256 Mbit Double Data Rate SDRAM

HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
Table 14 Normal Strength Pull-down and Pull-up Currents
Voltage (V)
Pulldown Current (mA)
Nominal Nominal min.
Low
High
max.
Nominal
Low
0.1
6.0
6.8
4.6
9.6
−6.1
0.2
12.2
13.5
9.2
18.2
−12.2
0.3
18.1
20.1
13.8
26.0
−18.1
0.4
24.1
26.6
18.4
33.9
−24.0
0.5
29.8
33.0
23.0
41.8
−29.8
0.6
34.6
39.1
27.7
49.4
−34.3
0.7
39.4
44.2
32.2
56.8
−38.1
0.8
43.7
49.8
36.8
63.2
−41.1
0.9
47.5
55.2
39.6
69.9
−43.8
1.0
51.3
60.3
42.6
76.3
−46.0
1.1
54.1
65.2
44.8
82.5
−47.8
1.2
56.2
69.9
46.2
88.3
−49.2
1.3
57.9
74.2
47.1
93.8
−50.0
1.4
59.3
78.4
47.4
99.1
−50.5
1.5
60.1
82.3
47.7
103.8
−50.7
1.6
60.5
85.9
48.0
108.4
−51.0
1.7
61.0
89.1
48.4
112.1
−51.1
1.8
61.5
92.2
48.9
115.9
−51.3
1.9
62.0
95.3
49.1
119.6
−51.5
2.0
62.5
97.2
49.4
123.3
−51.6
2.1
62.9
99.1
49.6
126.5
−51.8
2.2
63.3
100.9
49.8
129.5
−52.0
2.3
63.8
101.9
49.9
132.4
−52.2
2.4
64.1
102.8
50.0
135.0
−52.3
2.5
64.6
103.8
50.2
137.3
−52.5
2.6
64.8
104.6
50.4
139.2
−52.7
2.7
65.0
105.4
50.5
140.8
−52.8
Pullup Current (mA)
Nominal min.
High
−7.6
−4.6
−14.5
−9.2
−21.2
−13.8
−27.7
−18.4
−34.1
−23.0
−40.5
−27.7
−46.9
−32.2
−53.1
−36.0
−59.4
−38.2
−65.5
−38.7
−71.6
−39.0
−77.6
−39.2
−83.6
−39.4
−89.7
−39.6
−95.5
−39.9
−101.3 −40.1
−107.1 −40.2
−112.4 −40.3
−118.7 −40.4
−124.0 −40.5
−129.3 −40.6
−134.6 −40.7
−139.9 −40.8
−145.2 −40.9
−150.5 −41.0
−155.3 −41.1
−160.1 −41.2
max.
−10.0
−20.0
−29.8
−38.8
−46.8
−54.4
−61.8
−69.5
−77.3
−85.2
−93.0
−100.6
−108.1
−115.5
−123.0
−130.4
−136.7
−144.2
−150.5
−156.9
−163.2
−169.6
−176.0
−181.3
−187.6
−192.9
−198.2
Table 15 Pull-down and Pull-up Process Variations and Conditions
Parameter
Nominal
Minimum
Operating Temperature
25 °C
0 °C
V_DD/V_DDQ
Process Corner
2.5 V
typical
2.3 V
slow-slow
Maximum
70 °C
2.7 V
fast-fast
Data Sheet
57
Rev. 1.2, 2004-02
02102004-TSR1-4ZWW