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| HYS64D16301GU Datasheet, PDF (23/51 Pages) Infineon Technologies AG – 184-Pin Unbuffered Dual-In-Line Memory Modules | |||
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HYS[64/72]D[16x01/32x00/64x20][G/E]U-[5/6/7/8]-B
Unbuffered DDR SDRAM Modules
Electrical Characteristics
Table 14 Operating, Standby and Refresh Currents (PC3200, â5)
Unit Note1)2)
128MB Ã 64 256MB Ã 64 256MB Ã 72 512MB Ã 64 512MB Ã 72
1 rank
1 rank
1 rank
2 ranks
2 ranks
Symbol typ. max. typ. max. typ. max. typ. max. typ. max.
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7
400
460
24
184
96
68
240
560
600
620
6.4
1040
480
540
36
224
136
96
296
700
720
780
10.4
1240
720
840
48
368
192
136
456
920
1000
1240
12.8
1920
920
1000
72
448
272
192
552
1160
1200
1560
20.8
2240
810
945
54
414
216
153
513
1035
1125
1395
14.4
2160
1035
1125
81
504
306
216
621
1305
1350
1755
23.4
2520
1176
1296
96
736
384
272
912
1376
1456
1696
25.6
2376
1472
1552
144
896
544
384
1104
1712
1752
2112
41.6
2792
132
1458
108
828
432
306
1026
1548
1638
1908
28.8
2673
1656
1746
162
1008
612
432
1242
1926
1971
2376
46.8
3141
mA 3)
mA 3)4)
mA 5)
mA 5)
mA 5)
mA 5)
mA 5)
mA 3)4)
mA 3)
mA 3)
mA 5)
mA 3)4)
1) DRAM component currents only
2) Test condition for maximum values: VDD = 2.7 V, TA = 10 °C
3) The module IDDx values are calculated from the component IDDx data sheet values as:
m à IDDx[component] + n à IDD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank modules
4) DQ I/O (IDDQ) currents are not included into calculations: module IDD values will be measured differently depending on load
conditions
5) The module IDDx values are calculated from the corrponent IDDx data sheet values as: (m + n) Ã IDDx[component]
Data Sheet
23
V1.1, 2003-07
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