HYS64D16301GU Datasheet, PDF (21/51 Pages) Infineon Technologies AG – 184-Pin Unbuffered Dual-In-Line Memory Modules

HYS[64/72]D[16x01/32x00/64x20][G/E]U-[5/6/7/8]-B
Unbuffered DDR SDRAM Modules
Electrical Characteristics
Table 12 Operating, Standby and Refresh Currents (PC2100, –7 & –7F)
Unit Note
1)2)
128MB
× 64
256MB
× 64
256MB
× 72
512MB
× 64
512MB
× 72
512MB
× 72
512MB
× 72
1 rank
1 rank
1 rank
1 rank
1 rank
2 ranks 2 ranks
Sym- typ. max. typ. max. typ. max. typ. max. typ. max. typ. max. typ. max.
bol
I_DD0
I_DD1
I_DD2P
I_DD2F
I_DD2Q
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5
I_DD6
I_DD7
308 420
376 460
22 32
140 160
80 100
60 72
208 240
428 520
476 560
540 720
6 10
720 940
600 800 675 900 747 990 1000 1240 1125 1395 1197 1485 mA ³⁾
720 880 810 990 882 1080 1120 1320 1260 1485 1332 1575 mA ³⁾⁴⁾
44 64 49.5 72 49.5 72 88 128 99 144 99 144 mA ⁵⁾
280 320 315 360 315 360 560 640 630 720 630 720 mA ⁵⁾
160 200 180 225 180 225 320 400 360 450 360 450 mA ⁵⁾
120 144 135 162 135 162 240 288 270 324 270 324 mA ⁵⁾
400 440 450 495 450 495 800 880 900 990 900 990 mA ⁵⁾
760 920 855 1035 855 1035 1160 1360 1305 1530 1305 1530 mA ³⁾⁴⁾
840 1000 945 1125 945 1125 1240 1440 1395 1620 1395 1620 mA ³⁾
1080 1440 1215 1620 1217 1620 1480 1880 1665 2115 1667 2115 mA ³⁾
12 20 13.5 22.5 13.5 22.5 24 40 27 45 27 45 mA ⁵⁾
1369 1800 1540 2025 1540 2025 1769 2240 1990 2520 1990 2520 mA ³⁾⁴⁾
1) DRAM component currents only
2) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
3) The module I_DDx values are calculated from the component I_DDx data sheet values as:
m × I_DDx[component] + n × I_DD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank modules
4) DQ I/O (I_DDQ) currents are not included into calculations: module I_DD values will be measured differently depending on load
conditions
5) The module I_DDx values are calculated from the corrponent I_DDx data sheet values as: (m + n) × I_DDx[component]
Data Sheet
21
V1.1, 2003-07