HYS64D16301GU Datasheet, PDF (22/51 Pages) Infineon Technologies AG – 184-Pin Unbuffered Dual-In-Line Memory Modules

HYS[64/72]D[16x01/32x00/64x20][G/E]U-[5/6/7/8]-B
Unbuffered DDR SDRAM Modules
Electrical Characteristics
Table 13 Operating, Standby and Refresh Currents (PC2700, –6)
Unit Note
1)2)
128MB × 64 256MB × 64 256MB × 72 512MB × 64 512MB × 72
1 rank
1 rank
1 rank
2 ranks
2 ranks
Symbol typ. max. typ. max. typ. max. typ. max. typ. max.
I_DD0
I_DD1
I_DD2P
I_DD2F
I_DD2Q
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5
I_DD6
I_DD7
352
416
24
180
98.8
72
252
496
564
574
6
872
460
500
36
220
112
84
280
640
660
760
10
1140
680
800
48
360
197.6
144
480
880
1000
1148
12
1662
880
960
72
440
224
168
520
1120
1160
1520
20
2160
765
900
54
405
222.3
162
540
990
1125
1292
13.5
1870
990
1080
81
495
252
189
585
1260
1305
1710
22.5
2430
1160
1280
96
720
395.2
288
960
1360
1480
1628
24
2142
1400
1480
144
880
448
336
1040
1640
1680
2040
40
2680
1305
1440
108
810
444.6
324
1080
1530
1665
1832
27
2410
1575
1665
162
990
504
378
1170
1845
1890
2295
45
3015
mA ³⁾
mA ³⁾⁴⁾
mA ⁵⁾
mA ⁵⁾
mA ⁵⁾
mA ⁵⁾
mA ⁵⁾
mA ³⁾⁴⁾
mA ³⁾
mA ³⁾
mA ⁵⁾
mA ³⁾⁴⁾
1) DRAM component currents only
2) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
3) The module I_DDx values are calculated from the component I_DDx data sheet values as:
m × I_DDx[component] + n × I_DD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank modules
4) DQ I/O (I_DDQ) currents are not included into calculations: module I_DD values will be measured differently depending on load
conditions
5) The module I_DDx values are calculated from the corrponent I_DDx data sheet values as: (m + n) × I_DDx[component]
Data Sheet
22
V1.1, 2003-07