TC1798 Datasheet, PDF (199/200 Pages) Infineon Technologies AG – 32-Bit Single-Chip Microcontroller

TC1798
History
• update parameter description for SSC parameters t₅₂, t₅₃, t₅₆, t₅₇, t₅₈, and t₅₉
• change SSC parameters from CC to SR Symbol for t₅₆, t₅₇, t₅₈ and t₅₉
• add note to ERAY parameters for availability
• add parameters t₁₅, t₁₆, t₁₇, t₁₈, and t₁₉ to the EBU
• adapt EBU parameters for DDR Timming
• add footnote to Flash parameter t_ERD
• change for parameter N_E note from Max. data retention to Min.
• rework the 3.3 V current part of the Power Supply Parameters for better description
and usage
– Parameters I_{DDP_FP}, I_DDFL3E and I_DDFL3R are removed and replaced in the following
way
– I_{DDP_FP} is replaced by I_DDP with the condition including flash programming current
– I_DDFL3E is replaced by I_DDP with the condition including flash erase verify current
– I_DDFL3R is replaced by I_DDP with the condition including flash read current
– parameter I_DDFL3R was renamed to I_DDFL3
The rework of the 3.3 V current part of the Power Supply Parameters was done for
simplification and clarification. Former given values could still be used if liked, the new
definition results in the same resulting values or slightly better values. The flash module
is supplied via I_DDFL3 and I_DDP. For the different flash operating modes in worst case
different allocations for the two domains resulting.
The application typical case ‘flash read’ has max I_DDP of 25 mA and max I_DDFL3 of 98 mA
resulting is a sum of 123 mA.
The case ‘flash programming’ has max I_DDP of 55 mA and max I_DDFL3 of 29 mA resulting
is a sum of 84 mA.
The case ‘flash erase verify’ has max I_DDP of 40 mA and max I_DDFL3 of 98 mA resulting
is a sum of 138 mA.
So for the old parameter I_DDP with 35 mA, the new version reads as
I_DDP = 25+I_{DDP_PORST} = 32 mA for the same application relevant case.
The following changes where done between Version 1.0 and 1.1 of this document:
• change V_ILS from 2.1V to 1.9V in table 23
• change t₄₈ from 100ns to 200ns in table 42
• change t₄₉ from 100ns to 200ns in table 42
• extend K_OVAN conditon from I_OV≤ 0 mA; I_OV≥ -1 mA to I_OV≤ 0 mA; I_OV≥ -2 mA
• change t₈ from -4ns to -2ns in table 43
• change t₁₈ from -4ns to -2ns in table 43
• change t₃₇ parameter description from ‘Data output delay to WR rising edge,
deviation from the ideal programmed value’ to ‘Data output delay to WR falling edge,
deviation from the ideal programmed value’ in table 44
• Add R_DSONx information for class B pads to table 18
• Add exact definition ‘edge= sharp ; pin out driver= strong’ for the pad conviguration
of the rise and fall times in table 18
Data Sheet
5
V 1.1, 2014-05