HY27US08121M Datasheet, PDF (43/43 Pages) Hynix Semiconductor – 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

MARKING INFORMATION
Package
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Marking Example
TSOP1
/
WSOP1
/
FBGA
K
O
R
H
Y
2
7
x
S
x
x
1
2
1
M
x
x
x
x
Y WW
x
x
- hynix
- KOR
: Hynix Symbol
: Origin Country
- HY27xSxx121mTxB
: Part Number
HY: HYNIX
27: NAND Flash
x: Power Supply
: U(2.7V~3.6V), S(1.7V~2.2V)
S: Classification
: Single Level Cell+Single Die
xx: Bit Organization
: 08(x8), 16(x16)
12: Density
: 512Mb
1: Mode
: 1nCE & 1R/nB; CE don't care
M: Version
: 1st Generation
x: Package Type
: T(TSOP1), V(WSOP1), F(FBGA)
x: Package Material
x: Operating Temperature
: Blank(Normal), P(Lead Free)
: C(0℃~70℃), E(-25℃~85℃)
I(-40℃~85℃)
x: Bad Block
: B(Included Bad Block), S(1~5 Bad Block),
P(All Good Block)
- Y: Year (ex: 4=year 2004, 05= year 2005)
- ww: Work Week (ex: 12= work week 12)
- xx: Process Code
Note
- Capital Letter
- Small Letter
: Fixed Item
: Non-fixed Item
Rev 0.6 / Oct. 2004
43