HY27US08121M Datasheet, PDF (24/43 Pages) Hynix Semiconductor – 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
START
Block Address=
Block 0
Increment
Block Address
Data
NO
=FFh?
YES
Update
Bad Block table
Last
NO
block?
YES
END
Figure 20. Bad Block Management Flowchart
Table 8: Valid Block
Symbol
N_VB
Para.
# of Valid Block
Min
4016
Max
4096
Unit
Blocks
PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of Program/ Erase cycles per block are shown in Table 9.
Rev 0.6 / Oct. 2004
24