HY27US08121M Datasheet, PDF (25/43 Pages) Hynix Semiconductor – 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Table 9: Program, Erase Time and Program Erase Endurance Cycles
Parameters
Page Program Time
Block Erase Time
Program/Erase Cycles (per block)
Data Retention
Min
100,000
10
NAND Flash
Typ
200
2
Max
500
3
Unit
us
ms
cycles
years
MAXIMUM RATING
Stressing the device above the ratings listed in Table 10, Absolute Maximum Ratings, may cause permanent damage to
the device. These are stress ratings only and operation of the device at these or any other conditions above those indi-
cated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions
for extended periods may affect device reliability.
Table 10: Absolution Maximum Rating
Symbol
T_BIAS
T_STG
V_IO(1)
V_CC
Parameter
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
1.8V devices
3.3 V devices
1.8V devices
3.3 V devices
NAND Flash
Min
Max
-50
125
-65
150
-0.6
2.7
-0.6
4.6
-0.6
2.7
-0.6
4.6
Unit
o_C
o_C
V
V
V
V
Note: (1). Minimum Voltage may undershoot to -2V for less than 20ns during transitions on input and I/O pins. Maximum voltage
may overshoot to V_CC + 2V for less than 20ns during transitions on I/O pins.
DC AND AC PARAMETERS
This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device.
The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed under the Mea-
surement Conditions summarized in Table 11, Operating and AC Measurement Conditions. Designers should check that
the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters.
Rev 0.6 / Oct. 2004
25