HY27US08121M Datasheet, PDF (16/43 Pages) Hynix Semiconductor – 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
RB
I/O
00h/
01h/50h
Command
Code
tBLBH1
(Read Busy time)
tBLBH1
tBLBH1
Busy
Address Inputs
1st
Page Output
Busy
2nd
Page Output
Busy
Nth
Page Output
Figure 12. Sequential Row Read Operation
Block
Read A Command, x8 Devices
Area A
Area B
Area C
(1^st half Page) ^{(2nd half Page) (Spare)}
1^st Page
2^nd Page Block
N^th Page
Block
Read B Command, x8 Devices
Area A
Area B
Area C
(1^st half Page) (2^nd half Page) (Spare)
1^st Page
2^nd Page Block
N^th Page
Read A Command, x16 Devices
Area A
(main area)
Area C
(Spare)
1^st Page
2^nd Page
N^th Page
Read C Command, x8/x16 Devices
Area A
Area A/B
Area C
(Spare)
1^st Page
2^nd Page
N^th Page
Figure 13. Sequential Row Read Block Diagrams
Rev 0.6 / Oct. 2004
16