HY27US08121M Datasheet, PDF (28/43 Pages) Hynix Semiconductor – 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Table 14: AC Characteristics for Command, Address, Data Input (3.3V and 1.8V Device)
Symbol
t_ALLWL
t_ALHWL
t_CLHWL
t_CLLWL
t_DVWH
t_ELWL
t_WHALH
t_WHALL
t_WHCLH
t_WHCLL
t_WHDX
t_WHEH
t_WHWH
t_WLWH
t_WLWL
Alt.
Symbol
Parameter
3.3V 1.8V
Device Device
Unit
Address Latch Low to Write Enable Low
t_ALS
ALE Setup time Min
0
ns
Address Latch Hith to Write Enable Low
Command Latch High to Write Enable Low
t_CLS
CL Setup time
Min
0
ns
Command Latch Low to Write Enable Low
t_DS
Data Valid to Write Enable High
Data Setup time Min
20
ns
t_CS
Chip Enable Low to Write Enable Low
CE Setup time
Min
0
ns
Write Enable High to Address Latch High
t_ALH
ALE Hold time
Min
10
ns
Write Enable High to Address Latch Low
Write Enable High to Command Latch High
t_CLH
CLE hold time
Min
10
ns
Write Enable High to Command Latch Low
t_DH
Write Enable High to Data Transition
Data Hold time Min
10
ns
t_CH
Write Enable High to Chip Enable High
CE Hold time
Min
10
ns
t_WH
Write Enable High to Write Enable Low
WE High Hold time Min
15
20
ns
t_WP
Write Enable Low to Write Enable High
WE Pulse Width
Min
25⁽¹⁾
60
ns
t_WC
Write Enable Low to Write Enable Low
Write Cycle time Min
50
80
ns
Note: 1. If t_ELWL is less than 10ns, t_WLWH must be minimum 35ns, otherwise, t_WLWH may be minimum 25ns.
Rev 0.6 / Oct. 2004
28