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HY27US08121M Datasheet, PDF (33/43 Pages) Hynix Semiconductor – 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
CLE
CE
WE
ALE
RE
I/O
90h
tALLRL1
tRLQV
(Read ES Access time)
00h
Man.
code
Device
code
Don't
Care
Don't
Care
Read Electronic
1st Cycle
Signature Command Address
Manufacturer and
Device Code
Reserved For
Future Use
Figure 26. Read Electronic Signature AC Waveform
Note: Refer to table(To see Page 22) for the values of the manufacture and device codes.
CLE
CE
WE
ALE
RE
RB
tWHWL
tWHBL
tWHBH
tBLBH1
tEHEL
tEHQZ
tEHBH
tALLRL2
tRLRH
tRLRL
(Read Cycle time)
tRHQZ
tRHBL
I/O
00h or Add.N Add.N Add.N Add.N
01h cycle 1 cycle 2 cycle 3 cycle 4
Command
Code
Address N Input
Busy
Data
N
Data
N+1
Data
N+2
Data
Last
Data Output
from Address N to Last Byte or Word in Page
Figure 27. Read Read A/ Read B Operation AC Waveform
Rev 0.6 / Oct. 2004
33