HY27US08121M Datasheet, PDF (2/43 Pages) Hynix Semiconductor – 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
SUPPLY VOLTAGE
- 3.3V device: VCC = 2.7 to 3.6V : HY27USXX121M
- 1.8V device: VCC = 1.7 to 1.95V : HY27SSXX121M
Memory Cell Array
- 528Mbit = 528 Bytes x 32 Pages x 4,096 Blocks
FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
Sequential Row Read OPTION
AUTOMATIC PAGE 0 READ AT POWER-UP
OPTION
- Boot from NAND support
- Automatic Memory Download
SERIAL NUMBER OPTION
PAGE SIZE
- x8 device : (512 + 16 spare) Bytes
: HY27(U/S)S08121M
- x16 device: (256 + 8 spare) Words
: HY27(U/S)S16121M
BLOCK SIZE
- x8 device: (16K + 512 spare) Bytes
- x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
- Random access: 12us (max)
- Sequential access: 50ns (min)
- Page program time: 200us (typ)
COPY BACK PROGRAM MODE
- Fast page copy without external buffering
HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions
DATA INTEGRITY
- 100,000 Program/Erase cycles
- 10 years Data Retention
PACKAGE
- HY27US(08/16)121M-T(P)
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27US(08/16)121M-T (Lead)
- HY27US(08/16)121M-TP (Lead Free)
- HY27US08121M-V(P)
: 48-Pin WSOP1 (12 x 17 x 0.7 mm)
- HY27US08121M-V (Lead)
- HY27US08121M-VP (Lead Free)
- HY27(U/S)S(08/16)121M-F(P)
: 63-Ball FBGA (8.5 x 15 x 1.2 mm)
- HY27US(08/16)121M-F (Lead)
- HY27US(08/16)121M-FP (Lead Free)
- HY27SS(08/16)121M-F (Lead)
- HY27SS(08/16)121M-FP (Lead Free)
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 0.6 / Oct. 2004
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