HY27US08121M Datasheet, PDF (1/43 Pages) Hynix Semiconductor – 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Document Title
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory
Revision History
No.
History
0.0 Initial Draft
0.1 Renewal Product Group
0.2 Make a decision of PKG information
0.3 Append 1.8V Operation Product to Data sheet
1) Add Errata
Draft Date
Sep.17.2003
Oct.07.2003
Nov.08.2003
Dec.01.2003
Remark
Preliminary
Preliminary
Preliminary
Preliminary
tWC tWH tWP tRC tREH tRP tREA@ID Read
Specification 50 15 25 50 15 30
35
Relaxed value 60 20 40 60 20 40
45
0.4
Mar.28.2004
Preliminary
2) Modify the description of Device Operations
- /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled
(Enabled) (Page22)
3) Add the description of System Interface Using CE don’t care
(Page37)
1) Delete Errata
2) Change Characteristics (3V Product)
0.5
Before
After
tCRY
60 + tr
70 + tr
tREA@ID Read
35
45
Jun. 01. 2004 Preliminary
3) Delete Cache Program
1) Change TSOP1, WSOP1, FBGA package dimension
0.6 2) Edit TSOP1, WSOP1 package figures
3) Change FBGA package figure
Oct. 20. 2004
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 0.6 / Oct. 2004
1