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HY27US08121M Datasheet, PDF (27/43 Pages) Hynix Semiconductor – 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
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HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Table 13: DC Characteristics, 3.3V Device and 1.8V Device
Sym-
bol
Parameter
Test Condition
3.3V Device
Min Typ
Max
1.8V Device
Min
Typ
Max
Unit
ICC1
Sequentia
Read
tRLRL minimum
CE=VIL, IOUT = 0 mA
-
Operating
ICC2
Current
Program
-
-
ICC3
Erase
-
-
ICC4
Stand-by Current (TTL)
CE=VIH, WP=0V/VCC
-
ICC5
Stand-By Current
(CMOS)
CE=VCC-0.2,
WP=0/VCC
-
ILI
Input Leakage Current
VIN= 0 to VCCmax
-
ILO
Output Leakage Current VOUT= 0 to VCCmax
-
VIH
Input High Voltage
-
2.0
VIL
Input Low Voltage
-
-0.3
3.3V IOH = -400uA
VOH Output High Voltage Level
2.4
1.8V IOH = -100uA
3.3V IOL = 2.1mA
VOL Output Low Voltage Level
-
1.8V IOL = 100uA
3.3V VOL = 0.4V
IOL(RB) Output Low Current (RB)
8
1.8V VOL = 0.1V
VLKO
VDD Supply Voltage
(Erase and Program
lockout)
-
-
10
20
-
10
20
-
10
20
-
-
1
-
10
50
-
-
± 10
-
-
± 10
-
-
VCC+0.3 VCC-0.4
-
0.8
-0.3
-
-
VCC-0.1
-
0.4
-
10
-
3
-
2.5
-
8
15
mA
8
15
mA
8
15
mA
-
1
mA
10
50
uA
-
± 10 uA
-
± 10 uA
VCC+0.3 V
0.4
V
-
-
V
-
0.1
V
4
-
mA
-
1.5
V
Rev 0.6 / Oct. 2004
27
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