HY27US08121M Datasheet, PDF (26/43 Pages) Hynix Semiconductor – 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Table 11: Operating and AC Measurement Conditions
Parameter
Supply Voltage (V_CC)
1.8V devices
2.6V devices⁽¹⁾
3.3V devices
Ambient Temperature (T_A)
Commercial Temp.
Indurstrial Temp.
Load Capacitance (C_L) (1 TTL GATE and C_L)
1.8V devices
2.6V devices⁽¹⁾
3.3V devices
Input Pulses Voltages
1.8V devices
2.6V devices⁽¹⁾
3.3V devices
Input and Output Timing Ref. Voltages
1.8V devices
2.6V devices⁽¹⁾
3.3V devices
Input Rise and Fall Times
Note : (1). TBD
NAND Flash
Min
Max
1.7
1.95
2.4
2.8
2.7
3.6
0
70
-40
85
30
30
100
0
V_CC
0
V_CC
0.4
2.4
V_CC/2
1.5
5
Unit
V
V
V
o_C
o_C
pF
pF
pF
V
V
V
V
V
V
ns
Table 12: Capacitance
Symbol
C_IN
C_I/O
Parameter
Input Capacitance
Input/Output Capacitance
Test Condition
Typ
V_IN = 0V
V_IL = 0V
Note: T_A = 25^oC, f = 1 MHz. C_IN and C_I/O are not 100% tested.
Max
10
10
Unit
pF
pF
Rev 0.6 / Oct. 2004
26