HY27US08121M Datasheet, PDF (13/43 Pages) Hynix Semiconductor – 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash

HY27SS(08/16)121M Series
HY27US(08/16)121M Series
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
pointer code is issued. However, the Read B command is effective for only one operation, once an operation has been
executed in Area B the pointer returns automatically to Area A.
The pointer operations can also be used before a program operation, that is the appropriate code (00h, 01h or 50h)
can be issued before the program command 80h is issued (see Figure 9).
x8 Devices
Area A
(00h)
Area B
(01h)
Area C
(50h)
Bytes 0-255
Bytes 256-511
Bytes
512-527
x16 Devices
Area A
(00h)
Words 0-256
Area C
(50h)
Words
256-263
A
B
C
Page Buffer
A
C
Page Buffer
Pointer
(00h, 01h, 50h)
Figure 8. Pointer Operation
Pointer
(00h, 50h)
AREA A
I/O
00h
80h
Address
Inputs
Data
Input
10h
00h
80h
Address
Inputs
Data
Input
10h
AREA A, B, C can be programmed depending on how much data is input.
Subsequent 00h commands can be omitted.
AREA B
I/O
01h
80h
Address
Inputs
Data
Input
10h
01h
80h
Address
Inputs
Data
Input
10h
AREA B, C can be programmed depending on how much data is input.
The 01h command must be re-issued before each program.
AREA C
I/O
50h
80h
Address
Inputs
Data
Input
10h
50h
80h
Only Areas C can be programmed.
Subsequent 50h commands can be omitted.
Address
Inputs
Data
Input
10h
Figure 9. Pointer Operations for Programming
Rev 0.6 / Oct. 2004
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