GS4288C09 Datasheet, PDF (1/62 Pages) GSI Technology – 32M x 9, 16M x 18, 8M x 36 288Mb CIO Low Latency DRAM (LLDRAM) II

GS4288C09/18/36L
144-Ball BGA
Commercial Temp
Industrial Temp
32M x 9, 16M x 18, 8M x 36
288Mb CIO Low Latency DRAM (LLDRAM) II
533 MHz–300 MHz
2.5 V V_EXT
1.8 V V_DD
1.5 V or 1.8 V V_DDQ
Features
• Pin- and function-compatible with Micron RLDRAM® II
• 533 MHz DDR operation (1.067Gb/s/pin data rate)
• 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency)
• 8M x 36, 16M x 18, and 32M x 9 organizations available
• 8 internal banks for concurrent operation and maximum
bandwidth
• Reduced cycle time (15 ns at 533 MHz)
• Address Multiplexing (Nonmultiplexed address option
available)
• SRAM-type interface
• Programmable Read Latency (RL), row cycle time, and burst
sequence length
• Balanced Read and Write Latencies in order to optimize data
bus utilization
• Data mask for Write commands
• Differential input clocks (CK, CK)
• Differential input data clocks (DKx, DKx)
• On-chip DLL generates CK edge-aligned data and output
data clock signals
• Data valid signal (QVLD)
• 32 ms refresh (8K refresh for each bank; 64K refresh
command must be issued in total each 32 ms)
• 144-ball BGA package
• HSTL I/O (1.5 V or 1.8 V nominal)
• 25–60 matched impedance outputs
• 2.5 V V_EXT, 1.8 V V_DD, 1.5 V or 1.8 V V_DDQ I/O
• On-die termination (ODT) R_TT
• Commerical and Industrial Temperature
Commercial (+0° T_C +95°C)
Industrial (–40° T_C +95°C)
Introduction
The GSI Technology 288Mb Low Latency DRAM
(LLDRAM) II is a high speed memory device designed for
high address rate data processing typically found in networking
and telecommunications applications. The 8-bank architecture
and low tRC allows access rates formerly only found in
SRAMs.
The Double Data Rate (DDR) I/O interface provides high
bandwidth data transfers, clocking out two beats of data per
clock cycle at the I/O balls. Source-synchronous clocking can
be implemented on the host device with the provided free-
running data output clock.
Commands, addresses, and control signals are single data rate
signals clocked in by the True differential input clock
transition, while input data is clocked in on both crossings of
the input data clock(s).
Read and Write data transfers always in short bursts. The burst
length is programmable to 2, 4 or 8 by setting the Mode
Register.
The device is supplied with 2.5 V V_EXT and 1.8 V V_DD for the
core, and 1.5 V or 1.8 V for the HSTL output drivers.
Internally generated row addresses facilitate bank-scheduled
refresh.
The device is delivered in an efficent BGA 144-ball package.
Rev: 1.03 7/2014
1/62
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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