MC9S08GB60A Datasheet, PDF (54/302 Pages) Freescale Semiconductor, Inc – HCS08 Microcontrollers

Chapter 4 Memory
program time provided that the conditions above are met. In the case the next sequential address is the
beginning of a new row, the program time for that byte will be the standard time instead of the burst time.
This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump will be
disabled and high voltage removed from the array.
START
0
FACCERR ?
1
CLEAR ERROR
WRITE TO FCDIV⁽¹⁾
FCBEF ?
0
1
WRITE TO FLASH
TO BUFFER ADDRESS AND DATA
(1) _{Only required once}
after reset.
WRITE COMMAND TO FCMD
WRITE 1 TO FCBEF
TO LAUNCH COMMAND
AND CLEAR FCBEF ⁽²⁾
(2) _{Wait at least four bus cycles before}
checking FCBEF or FCCF.
FPVIO OR
YES
FACCERR ?
YES
NO
NEW BURST COMMAND ?
NO
ERROR EXIT
0
FCCF ?
1
DONE
Figure 4-3. Flash Burst Program Flowchart
MC9S08GB60A Data Sheet, Rev. 2
54
Freescale Semiconductor