MC9S08GB60A Datasheet, PDF (281/302 Pages) Freescale Semiconductor, Inc – HCS08 Microcontrollers

Appendix A Electrical Characteristics
A.10 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see Chapter 4, “Memory.”
Table A-13. Flash Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase
V_prog/erase
1.8
3.6
V
Supply voltage for read operation
0 < f_Bus < 8 MHz
0 < f_Bus < 20 MHz
V_Read
1.8
2.08
3.6
V
3.6
Internal FCLK frequency¹
f_FCLK
150
200
kHz
Internal FCLK period (1/FCLK)
t_Fcyc
5
6.67
μs
Byte program time (random location)⁽²⁾
t_prog
9
t_Fcyc
Byte program time (burst mode)⁽²⁾
t_Burst
4
t_Fcyc
Page erase time²
t_Page
4000
t_Fcyc
Mass erase time⁽²⁾
t_Mass
20,000
t_Fcyc
Program/erase endurance³
T_L to T_H = –40°C to + 85°C
T = 25°C
10,000
—
100,000
—
cycles
Data retention⁴
t_{D_ret}
15
100
—
years
1 _{The frequency of this clock is controlled by a software setting.}
2 _{These values are hardware state machine controlled. User code does not need to count cycles. This information}
supplied for calculating approximate time to program and erase.
3 _{Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information}
on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D,
Typical Endurance for Nonvolatile Memory.
4 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature}
and de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor
defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for
Nonvolatile Memory.
MC9S08GB60A Data Sheet, Rev. 2
Freescale Semiconductor
281