MC9S08GB60A Datasheet, PDF (263/302 Pages) Freescale Semiconductor, Inc – HCS08 Microcontrollers

Appendix A Electrical Characteristics
A.4 Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress
Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) This device
was qualified to AEC-Q100 Rev E. A device is considered to have failed if, after exposure to ESD pulses,
the device no longer meets the device specification requirements. Complete dc parametric and functional
testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Table A-3. ESD Protection Characteristics
Parameter
Symbol
Value
Unit
ESD Target for Machine Model (MM)
MM circuit description
V_THMM
200
V
ESD Target for Human Body Model (HBM)
HBM circuit description
V_THHBM
2000
V
A.5 DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table A-4. DC Characteristics (Sheet 1 of 3)
(Temperature Range = –40 to 85°C Ambient)
Parameter
Symbol
Min
Typical¹
Max
Unit
Supply voltage (run, wait and stop modes.)
0 < f_Bus < 8 MHz
0 < f_Bus < 20 MHz
V_DD
1.8
2.08
3.6
V
3.6
Minimum RAM retention supply voltage applied to
V_DD
V_RAM
1.0²
—
V
Low-voltage detection threshold — high range
(V_DD falling)
V_LVDH
2.08
2.1
2.2
V
(V_DD rising)
2.16
2.19
2.27
Low-voltage detection threshold — low range
(V_DD falling)
V_LVDL
1.80
1.82
1.91
V
(V_DD rising)
1.88
1.90
1.99
Low-voltage warning threshold — high range
(V_DD falling)
V_LVWH
2.35
2.40
2.5
V
(V_DD rising)
2.35
2.40
2.5
MC9S08GB60A Data Sheet, Rev. 2
Freescale Semiconductor
263