MC9S08QG8_09 Datasheet, PDF (52/314 Pages) Freescale Semiconductor, Inc – HCS08 Microcontrollers

Chapter 4 Memory Map and Register Definition
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
program time provided that the conditions above are met. In the case the next sequential address is the
beginning of a new row, the program time for that byte will be the standard time instead of the burst time.
This is because the high voltage to the array must be disabled and then enabled again. If a new burst
command has not been queued before the current command completes, then the charge pump will be
disabled and high voltage removed from the array.
WRITE TO FCDIV (Note 1)
Note 1: Required only once after reset.
FLASH BURST
PROGRAM FLOW
START
FACCERR ?
0
1
CLEAR ERROR
FCBEF ?
0
1
WRITE TO FLASH
TO BUFFER ADDRESS AND DATA
WRITE COMMAND (0x25) TO FCMD
WRITE 1 TO FCBEF
TO LAUNCH COMMAND
AND CLEAR FCBEF (Note 2)
Note 2: Wait at least four bus cycles before
checking FCBEF or FCCF.
FPVIO OR
YES
FACCERR ?
NO
YES _{NEW BURST COMMAND ?}
NO
ERROR EXIT
0
FCCF ?
1
DONE
Figure 4-3. FLASH Burst Program Flowchart
MC9S08QG8 and MC9S08QG4 Data Sheet, Rev. 5
50
Freescale Semiconductor