MC9S08QG8_09 Datasheet, PDF (287/314 Pages) Freescale Semiconductor, Inc – HCS08 Microcontrollers

Appendix A Electrical Characteristics
A.11 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see the Memory section.
Table A-15. FLASH Characteristics
Characteristic
Symbol
Min
Typical
Max
Unit
Supply voltage for program/erase:
T ≤ 85°C V_prog/erase
1.8
—
3.6
V
T > 85 °C
2.1
—
3.6
Supply voltage for read operation
Internal FCLK frequency¹
V_Read
1.8
—
3.6
V
f_FCLK
150
—
200
kHz
Internal FCLK period (1/FCLK)
Byte program time (random location)⁽²⁾
Byte program time (burst mode)⁽²⁾
Page erase time²
Mass erase time⁽²⁾
Program/erase endurance³
T_L to T_H = –40°C to + 125°C
T = 25°C
t_Fcyc
t_prog
t_Burst
t_Page
t_Mass
5
10,000
—
9
4
4000
20,000
—
100,000
6.67
—
—
μs
t_Fcyc
t_Fcyc
t_Fcyc
t_Fcyc
cycles
Data retention⁴
t_{D_ret}
15
100
—
years
1 _{The frequency of this clock is controlled by a software setting.}
2 _{These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for}
calculating approximate time to program and erase.
3 _{Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information on how}
Motorola defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
4 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated}
to 25°C using the Arrhenius equation. For additional information on how Motorola defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
MC9S08QG8 and MC9S08QG4 Data Sheet, Rev. 5
Freescale Semiconductor
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