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K10P81M100SF2 Datasheet, PDF (13/60 Pages) Freescale Semiconductor, Inc – K10 Sub-Family Data Sheet
Table 2. LVD and POR operating requirements (continued)
Symbol Description
Min.
Typ.
Max.
Unit
VHYS Low-voltage inhibit reset/recover hysteresis —
40
mV
low range
VBG Bandgap voltage reference
TBD
1.00
TBD
V
tLPO Internal low power oscillator period
factory trimmed
TBD
1000
TBD
μs
General
Notes
1. Rising thresholds are falling threshold + VHYS
5.1.3 Voltage and current operating behaviors
y Table 3. Voltage and current operating behaviors
r Symbol
a VOH
Description
Output high voltage — high drive strength
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = -10mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = -3mA
Min.
VDD – 0.5
VDD – 0.5
Max.
—
—
Unit
V
V
in Output high voltage — low drive strength
• 2.7 V ≤ VDD ≤ 3.6 V, IOH = -2mA
• 1.71 V ≤ VDD ≤ 2.7 V, IOH = -0.6mA
VDD – 0.5
—
V
VDD – 0.5
—
V
lim IOHT
Output high current total for all ports
VOL
Output low voltage — high drive strength
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 10mA
e • 1.71 V ≤ VDD ≤ 2.7 V, IOL = 3mA
—
100
mA
—
0.5
V
—
0.5
V
r Output low voltage — low drive strength
• 2.7 V ≤ VDD ≤ 3.6 V, IOL = 2mA
P • 1.71 V ≤ VDD ≤ 2.7 V, IOL = 0.6mA
—
0.5
V
—
0.5
V
Notes
IOLT
IIN
IOZ
RPU and
RPD
Output low current total for all ports
Input leakage current (per pin)
Hi-Z (off-state) leakage current (per pin)
Internal weak pullup and pulldown resistors
1. Measured at VIL max and VDD min
—
100
mA
—
1
μA
—
1
μA
30
50
kΩ
1
K10 Sub-Family Data Sheet Data Sheet, Rev. 1, 11/2010.
Freescale Semiconductor, Inc.
Preliminary
13